X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films
Identifieur interne : 010263 ( Main/Repository ); précédent : 010262; suivant : 010264X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films
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Abstract
A model has been developed to describe x-ray scattering from CuPt-type ordered III-V ternary semiconductor alloys. The model takes into account the size distribution of the two different laminae-shaped variants, the random distribution of antiphase domain boundaries in each variant, and the atomic displacements due to the bond-length difference between the two constitutive binary materials. A synchrotron x-ray source was employed to measure the weak-ordering reflections from CuPt-ordered Ga0.5In0.5P and Al0.5In0.5As samples. By comparing the experimental results and the model calculations, structure information, including the average number of atomic layers in the laminae of each variant, the average antiphase domain size, and the average order parameter in each variant, were obtained. Results from single-variant films and poorly ordered films are also discussed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films</title><author><name sortKey="Li, J H" uniqKey="Li J">J. H. Li</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5506</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Physics Department, University of Houston, Houston</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Texas Center for Superconductivity, University of Houston, Houston, Texas 77204</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Texas Center for Superconductivity, University of Houston, Houston</wicri:cityArea></affiliation></author><author><name sortKey="Kulik, J" uniqKey="Kulik J">J. Kulik</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Texas Center for Superconductivity, University of Houston, Houston, Texas 77204</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Texas Center for Superconductivity, University of Houston, Houston</wicri:cityArea></affiliation></author><author><name sortKey="Holy, V" uniqKey="Holy V">V. Holy</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Solid State Physics, Faculty of Science, Masaryk University, Kotlarska 2, 61137 Brno, Czech Republic</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">République tchèque</country><wicri:regionArea>Department of Solid State Physics, Faculty of Science, Masaryk University, Kotlarska 2, 61137 Brno</wicri:regionArea><placeName><settlement type="city">Brno</settlement><region>Moravie</region></placeName></affiliation></author><author><name sortKey="Zhong, Z" uniqKey="Zhong Z">Z. Zhong</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5506</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Physics Department, University of Houston, Houston</wicri:cityArea></affiliation></author><author><name sortKey="Moss, S C" uniqKey="Moss S">S. C. Moss</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5506</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Physics Department, University of Houston, Houston</wicri:cityArea></affiliation></author><author><name sortKey="Zhang, Y" uniqKey="Zhang Y">Y. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Ahrenkiel, S P" uniqKey="Ahrenkiel S">S. P. Ahrenkiel</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Mascarenhas, A" uniqKey="Mascarenhas A">A. Mascarenhas</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Bai, Jianming" uniqKey="Bai J">Jianming Bai</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831</s1><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Oak Ridge National Laboratory, Oak Ridge</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0155964</idno><date when="2001-04-15">2001-04-15</date><idno type="stanalyst">PASCAL 01-0155964 AIP</idno><idno type="RBID">Pascal:01-0155964</idno><idno type="wicri:Area/Main/Corpus">011705</idno><idno type="wicri:Area/Main/Repository">010263</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Anti-phase boundaries</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6855</term><term>6110</term><term>6865</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Aluminium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Couche mince semiconductrice</term><term>Diffraction RX</term><term>Joint antiphase</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A model has been developed to describe x-ray scattering from CuPt-type ordered III-V ternary semiconductor alloys. The model takes into account the size distribution of the two different laminae-shaped variants, the random distribution of antiphase domain boundaries in each variant, and the atomic displacements due to the bond-length difference between the two constitutive binary materials. A synchrotron x-ray source was employed to measure the weak-ordering reflections from CuPt-ordered Ga<sub>0.5</sub>In<sub>0.5</sub>P and Al<sub>0.5</sub>In<sub>0.5</sub>As samples. By comparing the experimental results and the model calculations, structure information, including the average number of atomic layers in the laminae of each variant, the average antiphase domain size, and the average order parameter in each variant, were obtained. Results from single-variant films and poorly ordered films are also discussed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>63</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films</s1></fA08><fA11 i1="01" i2="1"><s1>LI (J. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>KULIK (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>HOLY (V.)</s1></fA11><fA11 i1="04" i2="1"><s1>ZHONG (Z.)</s1></fA11><fA11 i1="05" i2="1"><s1>MOSS (S. C.)</s1></fA11><fA11 i1="06" i2="1"><s1>ZHANG (Y.)</s1></fA11><fA11 i1="07" i2="1"><s1>AHRENKIEL (S. P.)</s1></fA11><fA11 i1="08" i2="1"><s1>MASCARENHAS (A.)</s1></fA11><fA11 i1="09" i2="1"><s1>BAI (Jianming)</s1></fA11><fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5506</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Texas Center for Superconductivity, University of Houston, Houston, Texas 77204</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Solid State Physics, Faculty of Science, Masaryk University, Kotlarska 2, 61137 Brno, Czech Republic</s1><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="05"><s1>Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831</s1><sZ>9 aut.</sZ></fA14><fA20><s2>155310-155310-11</s2></fA20><fA21><s1>2001-04-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0155964</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A model has been developed to describe x-ray scattering from CuPt-type ordered III-V ternary semiconductor alloys. The model takes into account the size distribution of the two different laminae-shaped variants, the random distribution of antiphase domain boundaries in each variant, and the atomic displacements due to the bond-length difference between the two constitutive binary materials. A synchrotron x-ray source was employed to measure the weak-ordering reflections from CuPt-ordered Ga<sub>0.5</sub>In<sub>0.5</sub>P and Al<sub>0.5</sub>In<sub>0.5</sub>As samples. By comparing the experimental results and the model calculations, structure information, including the average number of atomic layers in the laminae of each variant, the average antiphase domain size, and the average order parameter in each variant, were obtained. Results from single-variant films and poorly ordered films are also discussed.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A10</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H65</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6855</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6110</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6865</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Joint antiphase</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Anti-phase boundaries</s0></fC03><fN21><s1>099</s1></fN21><fN47 i1="01" i2="1"><s0>0114M001177</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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